TSM3446CX6

Taiwan Semiconductor TSM3446CX6

Part No:

TSM3446CX6

Datasheet:

-

Package:

-

AINNX NO:

24727239-TSM3446CX6

Description:

Power Field-Effect Transistor

Products specifications
  • Lifecycle Status
    Production (Last Updated: 2 years ago)
  • Number of Pins
    6
  • Breakdown Voltage / V
    51 V
  • Reverse Stand-off Voltage
    24 V
  • Manufacturer Lifecycle Status
    ACTIVE (Last Updated: 2 years ago)
  • RoHS
    Compliant
  • Resistance
    27 mΩ
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    2 W
  • Number of Channels
    2
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    200 mW
  • Max Reverse Leakage Current
    1 µA
  • Clamping Voltage
    70.1 V
  • Peak Pulse Current

    The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.

    21.4 A
  • Peak Pulse Power
    1.5 kW
  • Test Current
    2.5 mA
  • Drain to Source Voltage (Vdss)
    20 V
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1 V
  • Zener Voltage
    75 V
  • Reverse Recovery Time
    50 ns
  • Continuous Drain Current (ID)
    5.3 A
  • Threshold Voltage
    700 mV
  • Max Repetitive Reverse Voltage (Vrrm)
    250 V
  • Gate to Source Voltage (Vgs)
    870 mV
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    700 pF
  • Max Breakdown Voltage
    9.8 V
  • Max Forward Surge Current (Ifsm)
    2.5 A
  • Max Junction Temperature (Tj)
    150 °C
  • Nominal Vgs
    700 mV
  • Min Breakdown Voltage
    25.4 V
  • REACH SVHC
    No SVHC
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