Taiwan Semiconductor TSM5ND50CI C0G

Package / Case

ITO-220-3

RoHS

Details

Mounting Styles

Through Hole

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

500 V

Id - Continuous Drain Current

5 A

Rds On - Drain-Source Resistance

1.5 Ohms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qg - Gate Charge

16 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Pd - Power Dissipation

42 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

4000

Typical Turn-Off Delay Time

16 ns

Typical Turn-On Delay Time

6.2 ns

Part # Aliases

TSM5ND50CI

Unit Weight

0.211644 oz

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tube

Series

TSM5ND50CI

Configuration

Single

Number of Channels

1 Channel

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

19 ns

Transistor Type

1 N-Channel