TSM650N15CR RLG

Taiwan Semiconductor Corporation TSM650N15CR RLG

Part No:

TSM650N15CR RLG

Datasheet:

TSM650N15CR

Package:

8-PowerTDFN

ROHS:

AINNX NO:

6837157-TSM650N15CR RLG

Description:

MOSFET N-CH 150V 24A 8PDFN

Products specifications
  • Factory Lead Time
    18 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Transistor Element Material
    SILICON
  • Current - Continuous Drain (Id) @ 25℃
    24A Tc
  • Drive Voltage (Max Rds On, Min Rds On)
    6V 10V
  • Number of Elements
    1
  • Power Dissipation (Max)
    96W Tc
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Digi-Reel®
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-F5
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    65m Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1829pF @ 75V
  • Gate Charge (Qg) (Max) @ Vgs
    36nC @ 10V
  • Drain to Source Voltage (Vdss)
    150V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain-source On Resistance-Max
    0.08Ohm
  • Pulsed Drain Current-Max (IDM)
    96A
  • DS Breakdown Voltage-Min
    150V
  • Avalanche Energy Rating (Eas)
    49 mJ
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
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