RN1112MFV(TL3,T)

Toshiba RN1112MFV(TL3,T)

Part No:

RN1112MFV(TL3,T)

Manufacturer:

Toshiba

Datasheet:

-

Package:

-

AINNX NO:

30898716-RN1112MFV(TL3,T)

Description:

Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 22kohm

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    3
  • RoHS
    Details
  • Factory Pack QuantityFactory Pack Quantity
    8000
  • Series
    RN1112MFV
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Collector Emitter Voltage (VCEO)
    50 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
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