Toshiba Semiconductor and Storage HN1B04FU-GR,LXHF

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Mfr

Toshiba Semiconductor and Storage

Product Status

Active

Current-Collector (Ic) (Max)

150mA

Qualification

AEC-Q200

Emitter- Base Voltage VEBO

5 V, 60 V

Pd - Power Dissipation

200 mW

Transistor Polarity

NPN, PNP

DC Collector/Base Gain hfe Min

120 at 2 mA, 6 V

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

120 MHz, 150 MHz

Part # Aliases

HN1B04FU-GR,LXHF(B

Manufacturer

Toshiba

Brand

Toshiba

DC Current Gain hFE Max

400 at 2 mA, 6 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

50 V

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

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Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

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Subcategory

Transistors

Technology

Si

Configuration

Dual

Power - Max

200mW

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

BJTs - Bipolar Transistors

Transistor Type

NPN, PNP

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 6V

Current - Collector Cutoff (Max)

100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic

250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Frequency - Transition

150MHz, 120MHz

Collector Base Voltage (VCBO)

50 V

Continuous Collector Current

150 mA

Product Category

a particular group of related products.

Bipolar Transistors - BJT