HN1C01FU-Y,LXHF

Toshiba Semiconductor and Storage HN1C01FU-Y,LXHF

Part No:

HN1C01FU-Y,LXHF

Datasheet:

-

Package:

6-TSSOP, SC-88, SOT-363

AINNX NO:

28580695-HN1C01FU-Y,LXHF

Description:

AUTO AEC-Q NPN + NPN TR VCEO:50V

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
    US6
  • Mfr
    Toshiba Semiconductor and Storage
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    150mA
  • Qualification
    AEC-Q200
  • Emitter- Base Voltage VEBO
    5 V
  • Pd - Power Dissipation
    200 mW
  • Transistor Polarity
    NPN
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 125 C
  • DC Collector/Base Gain hfe Min
    120 at 2 mA, 6 V
  • Factory Pack QuantityFactory Pack Quantity
    3000
  • Mounting Styles
    SMD/SMT
  • Gain Bandwidth Product fT
    80 MHz
  • Part # Aliases
    HN1C01FU-Y,LXHF(B
  • Manufacturer
    Toshiba
  • Brand
    Toshiba
  • DC Current Gain hFE Max
    400 at 2 mA, 6 V
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    50 V
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    MouseReel
  • Subcategory
    Transistors
  • Technology
    Si
  • Configuration
    Dual
  • Power - Max
    200mW
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    BJTs - Bipolar Transistors
  • Transistor Type
    2 NPN (Dual)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 2mA, 6V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Frequency - Transition
    80MHz
  • Collector Base Voltage (VCBO)
    60 V
  • Continuous Collector Current
    150 mA
  • Product Category

    a particular group of related products.

    Bipolar Transistors - BJT
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