TDTC123J,LM

Toshiba Semiconductor and Storage TDTC123J,LM

Part No:

TDTC123J,LM

Datasheet:

-

Package:

TO-236-3, SC-59, SOT-23-3

AINNX NO:

28803555-TDTC123J,LM

Description:

PB-F BIAS RESISTOR BUILT-IN TRAN

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23-3
  • Mfr
    Toshiba Semiconductor and Storage
  • Package
    Tape & Reel (TR)
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    100 mA
  • Pd - Power Dissipation
    320 mW
  • Transistor Polarity
    NPN
  • Typical Input Resistor
    2.2 kOhms
  • Factory Pack QuantityFactory Pack Quantity
    3000
  • Mounting Styles
    SMD/SMT
  • Peak DC Collector Current
    100 mA
  • Channel Mode
    Enhancement
  • Manufacturer
    Toshiba
  • Brand
    Toshiba
  • Maximum DC Collector Current
    100 mA
  • Collector- Emitter Voltage VCEO Max
    50 V
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Subcategory
    Transistors
  • Configuration
    Single
  • Power - Max
    320 mW
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    BJTs - Bipolar Transistors - Pre-Biased
  • Transistor Type
    NPN - Pre-Biased
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Frequency - Transition
    250 MHz
  • Resistor - Base (R1)
    2.2 kOhms
  • Continuous Collector Current
    100 mA
  • Product Category

    a particular group of related products.

    Bipolar Transistors - Pre-Biased
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