SI2338DS-T1-GE3

Vishay SI2338DS-T1-GE3

Part No:

SI2338DS-T1-GE3

Manufacturer:

Vishay

Datasheet:

-

Package:

-

AINNX NO:

69828841-SI2338DS-T1-GE3

Description:

N-Channel 30 V 28 mOhm 13 nC Surface Mount Power Mosfet - SOT-23-3

Products specifications
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Weight
    1.437803 g
  • Case/Package
    SOT-23-3
  • Number of Elements
    1
  • RoHS
    Compliant
  • Schedule B
    8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    20 ns
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    2.5 W
  • Number of Channels
    1
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    1.3 W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    3 ns
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    11 ns
  • Drain to Source Voltage (Vdss)
    30 V
  • Continuous Drain Current (ID)
    5.5 A
  • Threshold Voltage
    2.5 V
  • Gate to Source Voltage (Vgs)
    20 V
  • Drain to Source Breakdown Voltage
    30 V
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    424 pF
  • Max Junction Temperature (Tj)
    150 °C
  • Drain to Source Resistance
    23 mΩ
  • Rds On Max
    28 mΩ
  • Height
    1.12 mm
  • REACH SVHC
    No SVHC
  • Lead Free
    Lead Free
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