SI2399DS-T1-GE3

Vishay SI2399DS-T1-GE3

Part No:

SI2399DS-T1-GE3

Manufacturer:

Vishay

Datasheet:

-

Package:

-

AINNX NO:

69828883-SI2399DS-T1-GE3

Description:

Transistor: P-MOSFET; unipolar; -20V; -6A; 0.034ohm; 2.5W; -55+150 deg.C; SMD; SOT23

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Case/Package
    SOT-23-3
  • Number of Elements
    1
  • RoHS
    Compliant
  • Schedule B
    8541290080
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    28 ns
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    2.5 W
  • Number of Channels
    1
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    2.5 W
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    22 ns
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    20 ns
  • Drain to Source Voltage (Vdss)
    -20 V
  • Continuous Drain Current (ID)
    -6 A
  • Threshold Voltage
    -600 mV
  • Gate to Source Voltage (Vgs)
    12 V
  • Drain to Source Breakdown Voltage
    -20 V
  • Input Capacitance

    The capacitance between the input terminals of an op amp with either input grounded. It is expressed in units of farads.

    835 pF
  • Max Junction Temperature (Tj)
    150 °C
  • Drain to Source Resistance
    37 mΩ
  • Rds On Max
    34 mΩ
  • Nominal Vgs
    -600 mV
  • Height
    1.12 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • REACH SVHC
    No SVHC
  • Lead Free
    Lead Free
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