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VISHAY SIRB40DP-T1-GE3
Part No:
SIRB40DP-T1-GE3
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
69920011-SIRB40DP-T1-GE3
Category:
Description:
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A
Products specifications
- Type of transistorN-MOSFET x2
- Polarisationunipolar
- Drain-source voltage40V
- Drain current40A
- Pulsed drain current100A
- CasePowerPAK® SO8
- Gate-source voltage-16...20V
- MountingSMD
- Kind of packagereel
- Kind of channelenhanced
- CertificatesRoHS compliant
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