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VISHAY SIS932EDN-T1-GE3
Part No:
SIS932EDN-T1-GE3
Manufacturer:
Datasheet:
Package:
-
AINNX NO:
69920289-SIS932EDN-T1-GE3
Category:
Description:
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A
Products specifications
- Type of transistorN-MOSFET x2
- Polarisationunipolar
- Drain-source voltage30V
- Drain current6A
- Pulsed drain current40A
- CasePowerPAK® 1212-8
- Gate-source voltage±12V
- MountingSMD
- Kind of packagereel
- Kind of channelenhanced
- CertificatesRoHS compliant
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