SMCJ15A-E3/57T

Vishay SMCJ15A-E3/57T

Part No:

SMCJ15A-E3/57T

Manufacturer:

Vishay

Datasheet:

-

Package:

-

AINNX NO:

69830226-SMCJ15A-E3/57T

Category:

Accessories

Description:

SMCJ Series 1500 W 24.4 Vcl Uni-Directional SMT TVS Diode - DO-214AB

Products specifications
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Number of Pins
    2
  • Breakdown Voltage / V
    16.7 V
  • Case/Package
    SMC
  • Number of Elements
    1
  • Reverse Stand-off Voltage
    15 V
  • RoHS
    Compliant
  • Schedule B
    8541100080
  • Voltage Rating (DC)
    15 V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Termination
    SMD/SMT
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Power Rating
    1.5 kW
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1.5 kW
  • Operating Supply Voltage

    The voltage level by which an electrical system is designated and to which certain operating characteristics of the system are related.

    15 V
  • Working Voltage
    3.5 V
  • Polarity
    Unidirectional
  • Number of Channels
    1
  • Leakage Current
    1 µA
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Max Reverse Leakage Current
    1 µA
  • Clamping Voltage
    24.4 V
  • Peak Pulse Current

    The peak pulse power rating of a TVS diode is defined as the instantaneous power dissipated by a device for a given pulse condition, and is a measure of the power that is dissipated in the TVS junction during a given transient event.

    61.5 A
  • Max Surge Current

    Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

    61.5 A
  • Peak Pulse Power
    1.5 kW
  • Direction
    Unidirectional
  • Test Current
    1 mA
  • Reverse Breakdown Voltage
    16.7 V
  • Max Breakdown Voltage
    18.5 V
  • Max Junction Temperature (Tj)
    150 °C
  • Min Breakdown Voltage
    16.7 V
  • Height
    2.62 mm
  • Length
    7.11 mm
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • REACH SVHC
    Unknown
  • Lead Free
    Lead Free
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