Vishay Semiconductor Diodes Division VS-FA38SA50LCP

Mount

Chassis Mount, Screw

Mounting Type

Chassis Mount

Package / Case

SOT-227-4, miniBLOC

Number of Pins

4

Weight

30.000004g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

38A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

500W Tc

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

200 ns

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C~150°C TJ

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Bulk

Published

2012

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

ECCN Code

EAR99

Additional Feature

Any Feature, including a modified Existing Feature, that is not an Existing Feature.

AVALANCHE RATED, UL APPROVED

Terminal Position

UPPER

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

UNSPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Number of Channels

1

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Case Connection

ISOLATED

Turn On Delay Time

Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

42 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

130m Ω @ 23A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

6900pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

420nC @ 10V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

340ns

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±20V

Fall Time (Typ)

330 ns

Continuous Drain Current (ID)

38A

Threshold Voltage

4V

Gate to Source Voltage (Vgs)

20V

DS Breakdown Voltage-Min

500V

Avalanche Energy Rating (Eas)

580 mJ

REACH SVHC

Unknown

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant