CGHV31500F1

Cree CGHV31500F1

Part No:

CGHV31500F1

Manufacturer:

Cree

Datasheet:

-

Package:

440226-2

AINNX NO:

30863250-CGHV31500F1

Description:

RF JFET Transistors 500W, GaN HEMT, 50V, 2.7-3.1GHz,Long-pulse, Flange

Products specifications
  • Package / Case
    440226-2
  • Shipping Restrictions
    This product may require additional documentation to export from the United States.
  • RoHS
    N
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    -
  • Vgs - Gate-Source Breakdown Voltage
    -
  • Id - Continuous Drain Current
    500 mA
  • Maximum Drain Gate Voltage
    - 2.7 V
  • Minimum Operating Temperature
    - 40 C
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 75 C
  • Pd - Power Dissipation
    418 W
  • Mounting Styles
    Flange Mount
  • Factory Pack QuantityFactory Pack Quantity
    1
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tray
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    2.7 GHz to 3.1 GHz
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    57.9 dBm
  • Transistor Type
    HEMT
  • Gain
    -
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