CMPA2735030S

Cree CMPA2735030S

Part No:

CMPA2735030S

Manufacturer:

Cree

Datasheet:

-

Package:

QFN-32

AINNX NO:

30855715-CMPA2735030S

Description:

RF JFET Transistors 30W, GaN MMIC Power Amplifier, 50V, 2.7-3.5GHz, QFN, 5x5mm

Products specifications
  • Package / Case
    QFN-32
  • RoHS
    Details
  • Transistor Polarity
    N-Channel
  • Vds - Drain-Source Breakdown Voltage
    150 V
  • Vgs - Gate-Source Breakdown Voltage
    - 10 V, 2 V
  • Id - Continuous Drain Current
    4.6 A
  • Maximum Drain Gate Voltage
    -
  • Minimum Operating Temperature
    -
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 225 C
  • Pd - Power Dissipation
    32 W
  • Mounting Styles
    SMD/SMT
  • Moisture Sensitive
    Yes
  • Factory Pack QuantityFactory Pack Quantity
    50
  • Vgs th - Gate-Source Threshold Voltage
    - 3 V
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Operating Frequency

    Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.

    2.7 GHz to 3.5 GHz
  • Output Power

    That power available at a specified output of a device under specified conditions of operation.

    40.6 W
  • Transistor Type
    HEMT
  • Gain
    28.1 dB
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