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Cree CGHV38375F
CGHV38375F
440226
30855686-CGHV38375F
RF JFET Transistors 400W, GaN HEMT, 50V, 2.75-3.75GHz, IM FET, Flange
- Package / Case440226
- Shipping RestrictionsThis product may require additional documentation to export from the United States.
- RoHSDetails
- Transistor PolarityN-Channel
- Vds - Drain-Source Breakdown Voltage125 V
- Vgs - Gate-Source Breakdown Voltage- 10 V, 2 V
- Id - Continuous Drain Current24 A
- Minimum Operating Temperature- 40 C
- Maximum Operating Temperature
the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.
+ 125 C - Mounting StylesFlange Mount
- Factory Pack QuantityFactory Pack Quantity1
- Operating Frequency
Operating frequency is the frequency at which the communications are being made with the total bandwidth occupied by the carrier signal with modulation. Usually bandwidth of the antenna will be wider than the bandwidth of the signal so that more than one center frequency the antenna can be put in to effective use.
2.75 GHz to 3.75 GHz - Output Power
That power available at a specified output of a device under specified conditions of operation.
400 W - Transistor TypeHEMT
- Gain11 dB
GTVA107001FC-V1-R0
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