DMG1013T-7

Diodes Incorporated DMG1013T-7

Part No:

DMG1013T-7

Manufacturer:

Diodes Incorporated

Datasheet:

DMG1013T-7

Package:

SOT-523

ROHS:

AINNX NO:

6384153-DMG1013T-7

Description:

P-Channel 20 V 0.7 Ohm 0.27 W Enhancement Mode Mosfet - SOT-523

Products specifications
  • Factory Lead Time
    14 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-523
  • Number of Pins
    3
  • Weight
    2.012816mg
  • Transistor Element Material
    SILICON
  • Current - Continuous Drain (Id) @ 25℃
    460mA Ta
  • Drive Voltage (Max Rds On, Min Rds On)
    1.8V 4.5V
  • Number of Elements
    1
  • Power Dissipation (Max)
    270mW Ta
  • Turn Off Delay Time

    It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

    28.4 ns
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    700mOhm
  • Additional Feature

    Any Feature, including a modified Existing Feature, that is not an Existing Feature.

    HIGH RELIABILITY
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • Number of Channels
    1
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    270mW
  • Turn On Delay Time

    Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start.

    5.1 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    700m Ω @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    59.76pF @ 16V
  • Gate Charge (Qg) (Max) @ Vgs
    0.622nC @ 4.5V
  • Rise Time

    In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

    8.1ns
  • Drain to Source Voltage (Vdss)
    20V
  • Vgs (Max)
    ±6V
  • Fall Time (Typ)
    20.7 ns
  • Continuous Drain Current (ID)
    -460mA
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    6V
  • Drain Current-Max (Abs) (ID)
    0.46A
  • Drain to Source Breakdown Voltage
    -20V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    900μm
  • Length
    1.7mm
  • Width
    850μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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