IQE006NE2LM5

Infineon Technologies AG IQE006NE2LM5

Part No:

IQE006NE2LM5

Datasheet:

Package:

-

AINNX NO:

69244508-IQE006NE2LM5

Description:

Power Field-Effect Transistor,

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    8
  • Transistor Element Material
    SILICON
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    INFINEON TECHNOLOGIES AG
  • Date Of Intro
    2019-12-05
  • Drain Current-Max (ID)
    298 A
  • Moisture Sensitivity Levels
    1
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Operating Temperature-Min
    -55 °C
  • Package Body Material
    PLASTIC/EPOXY
  • Package Shape
    SQUARE
  • Package Style
    SMALL OUTLINE
  • JESD-609 Code
    e3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN
  • Terminal Position
    DUAL
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Reach Compliance Code
    unknown
  • Reference Standard
    IEC-61249-2-21; IEC-68-1
  • JESD-30 Code
    S-PDSO-N8
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    SOURCE
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.0008 Ω
  • Pulsed Drain Current-Max (IDM)
    1192 A
  • DS Breakdown Voltage-Min
    25 V
  • Avalanche Energy Rating (Eas)
    140 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    89 W
  • Feedback Cap-Max (Crss)
    195 pF
0 Similar Products Remaining
Documents & Media Download datasheets and manufacturer documentation for Infineon Technologies AG IQE006NE2LM5.
  • Datasheets :