IRF6715MPBF

Infineon Technologies AG IRF6715MPBF

Part No:

IRF6715MPBF

Datasheet:

Package:

-

AINNX NO:

69237803-IRF6715MPBF

Description:

Power Field-Effect Transistor, 34A I(D), 25V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3

Products specifications
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Rohs Code
    Yes
  • Part Life Cycle Code
    Obsolete
  • Ihs Manufacturer
    INFINEON TECHNOLOGIES AG
  • Package Description
    CHIP CARRIER, R-XBCC-N3
  • Drain Current-Max (ID)
    34 A
  • Number of Elements
    1
  • Operating Temperature-Max
    150 °C
  • Package Body Material
    UNSPECIFIED
  • Package Shape
    RECTANGULAR
  • Package Style
    CHIP CARRIER
  • JESD-609 Code
    e1
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Terminal Position
    BOTTOM
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    NO LEAD
  • Reach Compliance Code
    compliant
  • JESD-30 Code
    R-XBCC-N3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode

    A phase of operation during the operation and maintenance stages of the life cycle of a facility.

    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain-source On Resistance-Max
    0.0016 Ω
  • Pulsed Drain Current-Max (IDM)
    270 A
  • DS Breakdown Voltage-Min
    25 V
  • Avalanche Energy Rating (Eas)
    200 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    78 W
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