BCR141E6433HTMA1

International Rectifier BCR141E6433HTMA1

Part No:

BCR141E6433HTMA1

Datasheet:

-

Package:

TO-236-3, SC-59, SOT-23-3

AINNX NO:

40844254-BCR141E6433HTMA1

Description:

Products specifications
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    4
  • Supplier Device Package
    SOT-23-3
  • Watchdog Timers
    No
  • RoHS
    Compliant
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Current-Collector (Ic) (Max)
    100mA
  • Other Names
    BCR 141 E6433 BCR 141 E6433-ND BCR141E6433HTMA1TR BCR141E6433HTMA1TR-NDTR-ND BCR141E6433XT SP000010771
  • Series
    -
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    125 °C
  • Min Operating Temperature
    -40 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    245 mW
  • Base Part Number
    BCR141
  • Max Supply Voltage

    In general, the absolute maximum common-mode voltage is VEE-0.3V and VCC+0.3V, but for products without a protection element at the VCC side, voltages up to the absolute maximum rated supply voltage (i.e. VEE+36V) can be supplied, regardless of supply voltage.

    5.5 V
  • Min Supply Voltage

    The minimum supply voltage (V min ) is explored for sequential logic circuits by statistically simulating the impact of within-die process variations and gate-dielectric soft breakdown on data retention and hold time.

    1 V
  • Power - Max
    250mW
  • Transistor Type
    NPN - Pre-Biased
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 5mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Frequency - Transition
    130MHz
  • Resistor - Base (R1)
    22 kOhms
  • Resistor - Emitter Base (R2)
    22 kOhms
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
0 Similar Products Remaining