IXYS Integrated Circuits Division / Littelfuse IXFM12N100

Material

Si

EU RoHS

Compliant

Automotive

No

PPAP

No

Category

Power MOSFET

Process Technology

HDMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

12

Typical Gate Charge @ Vgs (nC)

122@10V

Typical Gate Charge @ 10V (nC)

122

Typical Input Capacitance @ Vds (pF)

4000@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

32

Typical Rise Time (ns)

33

Typical Turn-Off Delay Time (ns)

62

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

Through Hole

Package Height

11.4(Max)

Package Width

26.66

Package Length

30.15 + 9.54(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-204AA

RoHS

Compliant

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

62 ns

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Obsolete

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150 °C

Min Operating Temperature

-55 °C

Pin Count

a count of all of the component leads (or pins)

3

Configuration

Single

Element Configuration

The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

Single

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

300 W

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

33 ns

Continuous Drain Current (ID)

12 A

Gate to Source Voltage (Vgs)

20 V

Drain to Source Breakdown Voltage

1 kV

Channel Type

N

Drain to Source Resistance

1.05 Ω