MB10S

ON Semiconductor MB10S

Part No:

MB10S

Manufacturer:

ON Semiconductor

Datasheet:

Package:

TO-269AA, 4-BESOP

ROHS:

AINNX NO:

5750222-MB10S

Description:

BRIDGE RECT 1P 1KV 500MA 4SOIC

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-269AA, 4-BESOP
  • Number of Pins
    4
  • Supplier Device Package
    4-SOIC
  • Weight
    228mg
  • Number of Elements
    1
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    500V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2013
  • Tolerance
    10%
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150°C
  • Min Operating Temperature
    -55°C
  • Capacitance
    470pF
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    1.4W
  • Base Part Number
    MB10
  • Case Code (Metric)
    3216
  • Case Code (Imperial)
    1206
  • Lead Pitch
    5.0038mm
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Diode Type
    Single Phase
  • Current - Reverse Leakage @ Vr
    5μA @ 1000V
  • Voltage - Forward (Vf) (Max) @ If
    1V @ 500mA
  • Forward Current

    Current which flows upon application of forward voltage.

    800mA
  • Lead/Base Style
    Formed Leads
  • Max Surge Current

    Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

    35A
  • Current - Average Rectified (Io)
    500mA
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1V
  • Average Rectified Current

    Mainly used to characterize alternating voltage and current. It can be computed by averaging the absolute value of a waveform over one full period of the waveform.

    500mA
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    500μA
  • Max Repetitive Reverse Voltage (Vrrm)
    1kV
  • Peak Non-Repetitive Surge Current
    35A
  • Reverse Voltage

    the voltage drop across the diode if the voltage at the cathode is more positive than the voltage at the anode

    1kV
  • Max Forward Surge Current (Ifsm)
    35A
  • Voltage - Peak Reverse (Max)
    1kV
  • Max Junction Temperature (Tj)
    150°C
  • Reverse Voltage (DC)
    1kV
  • Height
    2.9mm
  • Height Seated (Max)
    8.9916mm
  • Length
    4.95mm
  • Width
    4.2mm
  • Thickness
    990.6μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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