MDB6S

ON Semiconductor MDB6S

Part No:

MDB6S

Manufacturer:

ON Semiconductor

Package:

4-SMD, Gull Wing

ROHS:

AINNX NO:

5750165-MDB6S

Description:

Diode Rectifier Bridge Single 600V 1A 4-Pin Micro DIP SMD T/R

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating

    Contact plating (finish) provides corrosion protection for base metals and optimizes the mechanical and electrical properties of the contact interfaces.

    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    4-SMD, Gull Wing
  • Number of Pins
    4
  • Weight
    270mg
  • Diode Element Material
    SILICON
  • Number of Elements
    1
  • Voltage Rated

    RATED voltage is the voltage on the nameplate - the "design point" for maximum power throughput and safe thermal operation.

    25V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~150°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape & Reel (TR)
  • Published
    2013
  • Tolerance
    10%
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Capacitance
    470nF
  • Terminal Position
    DUAL
  • Base Part Number
    MDB6
  • Case Code (Metric)
    2012
  • Case Code (Imperial)
    0805
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Diode Type
    Single Phase
  • Current - Reverse Leakage @ Vr
    10μA @ 600V
  • Voltage - Forward (Vf) (Max) @ If
    1.1V @ 1A
  • Forward Current

    Current which flows upon application of forward voltage.

    1A
  • Max Reverse Leakage Current
    10μA
  • Max Surge Current

    Surge current is a peak non repetitive current. Maximum (peak or surge) forward current = IFSM or if(surge), the maximum peak amount of current the diode is able to conduct in forward bias mode.

    30A
  • Output Current-Max
    1A
  • Forward Voltage

    the amount of voltage needed to get current to flow across a diode.

    1.1V
  • Number of Phases
    1
  • Peak Reverse Current

    The maximum voltage that a diode can withstand in the reverse direction without breaking down or avalanching.If this voltage is exceeded the diode may be destroyed. Diodes must have a peak inverse voltage rating that is higher than the maximum voltage that will be applied to them in a given application.

    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    600V
  • Peak Non-Repetitive Surge Current
    30A
  • Max Forward Surge Current (Ifsm)
    30A
  • Height
    1.45mm
  • Length
    2.0066mm
  • Width
    304.8μm
  • Thickness
    939.8μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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