NGTB25N120FL2WG

ON Semiconductor NGTB25N120FL2WG

Part No:

NGTB25N120FL2WG

Manufacturer:

ON Semiconductor

Datasheet:

NGTB25N120FL2WG

Package:

TO-247-3

ROHS:

AINNX NO:

5836587-NGTB25N120FL2WG

Description:

Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube

Products specifications
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    33 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Collector-Emitter Breakdown Voltage
    1.2kV
  • Test Conditions
    600V, 25A, 10 Ω, 15V
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C~175°C TJ
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    385W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Input Type
    Standard
  • Power - Max
    385W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.4V
  • Max Collector Current
    50A
  • Reverse Recovery Time
    154 ns
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 25A
  • IGBT Type
    Field Stop
  • Gate Charge

    the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

    178nC
  • Current - Collector Pulsed (Icm)
    100A
  • Td (on/off) @ 25°C
    87ns/179ns
  • Switching Energy
    1.95mJ (on), 600μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    ROHS3 Compliant
  • Lead Free
    Lead Free
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