IRGR3B60KD2TRP

Rochester Electronics IRGR3B60KD2TRP

Part No:

IRGR3B60KD2TRP

Datasheet:

-

Package:

-

AINNX NO:

54228553-IRGR3B60KD2TRP

Description:

N-Channel 600 V 4.2 A IGBT with Ultrafast Soft Recovery Diode - DPAK

Products specifications
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Collector-Emitter Breakdown Voltage
    600 V
  • RoHS
    Compliant
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Digi-Reel®
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    150 °C
  • Min Operating Temperature
    -55 °C
  • Max Power Dissipation

    The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

    52 W
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    52 W
  • Collector Emitter Voltage (VCEO)
    2.4 V
  • Max Collector Current
    7.8 A
  • Reverse Recovery Time
    77 ns
  • Max Breakdown Voltage
    600 V
  • Radiation Hardening

    Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

    No
  • Lead Free
    Lead Free
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