Taiwan Semiconductor Corporation TQM110NB04DCR RLG

Mounting Type

Surface Mount, Wettable Flank

Package / Case

8-PowerTDFN

Supplier Device Package

8-PDFNU (5x6)

Mfr

Taiwan Semiconductor Corporation

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

10A (Ta), 50A (Tc)

Base Product Number

TQM110

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

3.8 V

Qualification

AEC-Q101

Pd - Power Dissipation

2.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.013143 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

32 S

Channel Mode

Enhancement

Part # Aliases

TQM110NB04DCR

Manufacturer

Taiwan Semiconductor

Brand

Taiwan Semiconductor

Qg - Gate Charge

26 nC

Rds On - Drain-Source Resistance

11 mOhms

RoHS

Details

Typical Turn-Off Delay Time

16 ns

Id - Continuous Drain Current

10 A

Series

Automotive, AEC-Q101

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 175°C (TJ)

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

MouseReel

Subcategory

MOSFETs

Technology

Si

Number of Channels

2 Channel

Power - Max

2.5W (Ta), 58W (Tc)

FET Type

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs

11mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.8V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1354pF @ 20V

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

10 ns

Drain to Source Voltage (Vdss)

40V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

2 N-Channel

FET Feature

Standard

Product Category

a particular group of related products.

MOSFET