TSM300NB06LDCR RLG

Taiwan Semiconductor Corporation TSM300NB06LDCR RLG

Part No:

TSM300NB06LDCR RLG

Datasheet:

-

Package:

8-PowerTDFN

AINNX NO:

28693496-TSM300NB06LDCR RLG

Description:

60V, 24A, DUAL N-CHANNEL POWER M

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Supplier Device Package
    8-PDFNU (5x6)
  • Mfr
    Taiwan Semiconductor Corporation
  • Product Status
    Active
  • Current - Continuous Drain (Id) @ 25℃
    5A (Ta), 24A (Tc)
  • Vds - Drain-Source Breakdown Voltage
    60 V
  • Vgs th - Gate-Source Threshold Voltage
    2.5 V
  • Pd - Power Dissipation
    40 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Vgs - Gate-Source Voltage
    - 20 V, + 20 V
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    2500
  • Mounting Styles
    SMD/SMT
  • Channel Mode
    Enhancement
  • Part # Aliases
    TSM300NB06LDCR
  • Manufacturer
    Taiwan Semiconductor
  • Brand
    Taiwan Semiconductor
  • Qg - Gate Charge
    9 nC
  • Rds On - Drain-Source Resistance
    30 mOhms
  • RoHS
    Details
  • Id - Continuous Drain Current
    24 A
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    MouseReel
  • Subcategory
    MOSFETs
  • Technology
    Si
  • Number of Channels
    2 Channel
  • Power - Max
    2W (Ta), 40W (Tc)
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    30mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    966pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    MOSFET
  • FET Feature
    Logic Level Gate
  • Product
    MOSFET
  • Product Category

    a particular group of related products.

    MOSFET
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