3SK126-Y(TE85L,F)

Toshiba 3SK126-Y(TE85L,F)

Part No:

3SK126-Y(TE85L,F)

Manufacturer:

Toshiba

Package:

-

ROHS:

AINNX NO:

22799991-3SK126-Y(TE85L,F)

Description:

Trans RF FET N-CH 15V 0.03A 4-Pin(3+Tab) 2-3J1A T/R

Products specifications
  • Material
    Si
  • ECCN (US)
    EAR99
  • Channel Mode
    Depletion
  • Number of Elements per Chip
    1
  • Maximum Drain Source Voltage (V)
    15
  • Maximum Gate Source Voltage (V)
    ±9
  • Maximum Continuous Drain Current (A)
    0.03
  • Typical Input Capacitance @ Vds (pF)
    4.25@6V
  • Maximum Power Dissipation (mW)
    150
  • Typical Power Gain (dB)
    25
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    125
  • Supplier Package
    2-3J1A
  • Military
    No
  • Mounting
    Surface Mount
  • Package Height
    1.1
  • Package Length
    2.9
  • Package Width
    1.5
  • PCB changed
    3
  • Tab
    Tab
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tape and Reel
  • Part Status

    Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

    Obsolete
  • Pin Count

    a count of all of the component leads (or pins)

    4
  • Configuration
    Single Dual Gate
  • Channel Type
    N
  • RoHS Status

    RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

    RoHS Compliant
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