Transphorm TP65H015G5WS

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Mfr

Transphorm

Package

Tube

Product Status

Active

Current - Continuous Drain (Id) @ 25℃

93A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

266W (Tc)

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

78 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

276 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

Through Hole

Channel Mode

Enhancement

Manufacturer

Transphorm

Brand

Transphorm

Qg - Gate Charge

68 nC

Rds On - Drain-Source Resistance

18 mOhms

RoHS

Details

Typical Turn-Off Delay Time

132 ns

Id - Continuous Drain Current

95 A

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

-55°C ~ 150°C (TJ)

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Bulk

Subcategory

MOSFETs

Configuration

Single

Number of Channels

1 Channel

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

18mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4.8V @ 2mA

Input Capacitance (Ciss) (Max) @ Vds

5218 pF @ 400 V

Gate Charge (Qg) (Max) @ Vgs

100 nC @ 10 V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

20 ns

Drain to Source Voltage (Vdss)

650 V

Vgs (Max)

±20V

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Transistor Type

1 N-Channel

FET Feature

-

Product Category

a particular group of related products.

MOSFET