TP65H070LSG-TR

Transphorm TP65H070LSG-TR

Part No:

TP65H070LSG-TR

Manufacturer:

Transphorm

Datasheet:

-

Package:

3-PowerDFN

AINNX NO:

28432033-TP65H070LSG-TR

Description:

GANFET N-CH 650V 25A PQFN88

Products specifications
  • Mounting Type
    Surface Mount
  • Package / Case
    3-PowerDFN
  • Supplier Device Package
    3-PQFN (8x8)
  • Mfr
    Transphorm
  • Product Status
    Active
  • Current - Continuous Drain (Id) @ 25℃
    25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Power Dissipation (Max)
    96W (Tc)
  • Vds - Drain-Source Breakdown Voltage
    650 V
  • Moisture Sensitive
    Yes
  • Vgs th - Gate-Source Threshold Voltage
    4 V
  • Pd - Power Dissipation
    96 W
  • Transistor Polarity
    N-Channel
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    500
  • Mounting Styles
    SMD/SMT
  • Manufacturer
    Transphorm
  • Brand
    Transphorm
  • Rds On - Drain-Source Resistance
    148 mOhms
  • RoHS
    Details
  • Id - Continuous Drain Current
    25 A
  • Channel Mode
    Enhancement
  • Series
    TP65H070L
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    -55°C ~ 150°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Cut Tape
  • Subcategory
    MOSFETs
  • Number of Channels
    1 Channel
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    85mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id
    4.8V @ 700μA
  • Input Capacitance (Ciss) (Max) @ Vds
    600 pF @ 400 V
  • Gate Charge (Qg) (Max) @ Vgs
    9.3 nC @ 10 V
  • Drain to Source Voltage (Vdss)
    650 V
  • Vgs (Max)
    ±20V
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    MOSFET
  • Transistor Type
    HEMT
  • FET Feature
    -
  • Product Category

    a particular group of related products.

    MOSFET
0 Similar Products Remaining