Transphorm TP65H150G4PS

Package / Case

TO-220-3

Mfr

Transphorm

Package

Tube

Product Status

Active

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

37.8 ns

Vgs th - Gate-Source Threshold Voltage

4.8 V

Pd - Power Dissipation

52 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Transphorm

Brand

Transphorm

Qg - Gate Charge

8 nC

Rds On - Drain-Source Resistance

180 mOhms

RoHS

Details

Typical Turn-Off Delay Time

48 ns

Id - Continuous Drain Current

13 A

Series

-

Subcategory

MOSFETs

Technology

GaN

Configuration

Single

Number of Channels

1 Channel

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

5.2 ns

Product Type

a group of products which fulfill a similar need for a market segment or market as a whole.

MOSFET

Product Category

a particular group of related products.

MOSFET