SI7913DN-T1-GE3

VISHAY SI7913DN-T1-GE3

Part No:

SI7913DN-T1-GE3

Manufacturer:

VISHAY

Datasheet:

-

Package:

-

AINNX NO:

69909657-SI7913DN-T1-GE3

Description:

Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -7.4A; 2.8W

Products specifications
  • Type of transistor
    P-MOSFET x2
  • Polarisation
    unipolar
  • Drain-source voltage
    -20V
  • Drain current
    -7.4A
  • Pulsed drain current
    -20A
  • Case
    PowerPAK® 1212-8
  • Gate-source voltage
    ±8V
  • Mounting
    SMD
  • Kind of package
    reel
  • Kind of channel
    enhanced
  • Certificates
    RoHS compliant
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