Vishay Siliconix SI4108DY-T1-GE3

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Current - Continuous Drain (Id) @ 25℃

20.5A Tc

Number of Elements

1

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

23 ns

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Cut Tape (CT)

Series

TrenchFET®

Published

2017

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Max Operating Temperature

The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

7.8W

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

a count of all of the component leads (or pins)

8

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

7.8W

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

9.8m Ω @ 13.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 38V

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

11ns

Fall Time (Typ)

9 ns

Continuous Drain Current (ID)

20.5A

JEDEC-95 Code

MS-012AA

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

75V

Pulsed Drain Current-Max (IDM)

60A

Avalanche Energy Rating (Eas)

51.2 mJ

REACH SVHC

No SVHC

Radiation Hardening

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation, especially for environments in outer space (especially beyond the low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear warfare.

No

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant