Vishay Siliconix SIR774DP-T1-GE3

Surface Mount

having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

YES

Transistor Element Material

SILICON

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Operating Temperature (Max.)

150°C

Turn Off Delay Time

It is the time from when Vgs drops below 90% of the gate drive voltage to when the drain current drops below 90% of the load current. It is the delay before current starts to transition in the load, and depends on Rg. Ciss.

33 ns

Packaging

Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

Tape & Reel (TR)

Published

2017

Part Status

Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages.

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

ECCN Code

EAR99

Max Power Dissipation

The maximum power that the MOSFET can dissipate continuously under the specified thermal conditions.

62.5W

Terminal Position

DUAL

Terminal Form

Occurring at or forming the end of a series, succession, or the like; closing; concluding.

C BEND

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

a count of all of the component leads (or pins)

8

JESD-30 Code

R-XDSO-C5

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

A phase of operation during the operation and maintenance stages of the life cycle of a facility.

ENHANCEMENT MODE

Power Dissipation

the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

62.5W

Case Connection

DRAIN

Transistor Application

SWITCHING

Rise Time

In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value.

10ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Polarity/Channel Type

N-CHANNEL

Fall Time (Typ)

10 ns

Continuous Drain Current (ID)

40A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

Pulsed Drain Current-Max (IDM)

80A

Avalanche Energy Rating (Eas)

45 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

Drain to Source Resistance

2.1mOhm

RoHS Status

RoHS means “Restriction of Certain Hazardous Substances” in the “Hazardous Substances Directive” in electrical and electronic equipment.

ROHS3 Compliant