GT20J341,S4X(S

Toshiba Semiconductor and Storage GT20J341,S4X(S

Part No:

GT20J341,S4X(S

Datasheet:

-

Package:

TO-220-3 Full Pack

AINNX NO:

28815171-GT20J341,S4X(S

Description:

DISCRETE IGBT TRANSISTOR TO-220S

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Supplier Device Package
    TO-220SIS
  • Mfr
    Toshiba Semiconductor and Storage
  • Package
    Tube
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    20 A
  • Test Conditions
    300V, 20A, 33Ohm, 15V
  • Operating Temperature (Max.)
    150C
  • Operating Temperature Classification
    Military
  • Package Type
    TO-220SIS
  • Collector Current (DC)
    20(A)
  • Rad Hardened
    No
  • Operating Temperature (Min.)
    -55C
  • Gate to Emitter Voltage (Max)
    ±25(V)
  • Mounting
    Through Hole
  • Maximum Gate Emitter Voltage
    - 25 V, + 25 V
  • Pd - Power Dissipation
    45 W
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    50
  • Mounting Styles
    Through Hole
  • Manufacturer
    Toshiba
  • Brand
    Toshiba
  • Continuous Collector Current Ic Max
    80 A
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    600 V
  • Operating Temperature-Max
    150 °C
  • Rohs Code
    Yes
  • Manufacturer Part Number
    GT20J341,S4X(S
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    TOSHIBA CORP
  • Risk Rank
    2.3
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Magazine
  • ECCN Code
    EAR99
  • Subcategory
    IGBTs
  • Technology
    Si
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3 +Tab
  • Configuration
    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    45
  • Input Type
    Standard
  • Power - Max
    45 W
  • Polarity/Channel Type
    N-CHANNEL
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    IGBT Transistors
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Channel Type
    N
  • Power Dissipation-Max (Abs)
    45 W
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 20A
  • Collector Current-Max (IC)
    20 A
  • Continuous Collector Current
    20
  • IGBT Type
    -
  • Collector-Emitter Voltage-Max
    600 V
  • Current - Collector Pulsed (Icm)
    80 A
  • Td (on/off) @ 25°C
    60ns/240ns
  • Switching Energy
    500μJ (on), 400μJ (off)
  • Gate-Emitter Voltage-Max
    25 V
  • Reverse Recovery Time (trr)
    90 ns
  • Product Category

    a particular group of related products.

    IGBT Transistors
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