GT40RR21(STA1,E

Toshiba Semiconductor and Storage GT40RR21(STA1,E

Part No:

GT40RR21(STA1,E

Datasheet:

-

Package:

TO-3P-3, SC-65-3

AINNX NO:

28815170-GT40RR21(STA1,E

Description:

PB-F IGBT / TRANSISTOR TO-3PN IC

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P(N)
  • Mfr
    Toshiba Semiconductor and Storage
  • Package
    Tube
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    40 A
  • Test Conditions
    280V, 40A, 10Ohm, 20V
  • Base Product Number
    GT40RR21
  • Maximum Gate Emitter Voltage
    - 25 V, + 25 V
  • Pd - Power Dissipation
    230 W
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    25
  • Mounting Styles
    Through Hole
  • Manufacturer
    Toshiba
  • Brand
    Toshiba
  • Continuous Collector Current Ic Max
    200 A
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    1.35 kV
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    175°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Subcategory
    IGBTs
  • Technology
    Si
  • Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    230 W
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    IGBT Transistors
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 40A
  • IGBT Type
    -
  • Current - Collector Pulsed (Icm)
    200 A
  • Td (on/off) @ 25°C
    -
  • Switching Energy
    -, 540μJ (off)
  • Reverse Recovery Time (trr)
    600 ns
  • Product Category

    a particular group of related products.

    IGBT Transistors
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