Toshiba Semiconductor and Storage GT30N135SRA,S1E

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

Mfr

Toshiba Semiconductor and Storage

Package

Tube

Product Status

Active

Current-Collector (Ic) (Max)

60 A

Test Conditions

300V, 60A, 39Ohm, 15V

Maximum Gate Emitter Voltage

- 25 V, 25 V

Pd - Power Dissipation

348 W

Maximum Operating Temperature

the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

+ 175 C

Minimum Operating Temperature

- 55 C

Mounting Styles

Through Hole

Collector- Emitter Voltage VCEO Max

1.35 kV

Series

-

Operating Temperature

The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

175°C (TJ)

Technology

Si

Configuration

Single

Input Type

Standard

Power - Max

348 W

Voltage - Collector Emitter Breakdown (Max)

1350 V

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 60A

IGBT Type

-

Gate Charge

the amount of charge that needs to be injected into the gate electrode to turn ON (drive) the MOSFET.

270 nC

Current - Collector Pulsed (Icm)

120 A

Td (on/off) @ 25°C

-

Switching Energy

-, 1.3mJ (off)