GT50JR22(STA1,E,S)

Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)

Part No:

GT50JR22(STA1,E,S)

Datasheet:

-

Package:

TO-3P-3, SC-65-3

AINNX NO:

28809633-GT50JR22(STA1,E,S)

Description:

PB-F IGBT / TRANSISTOR TO-3PN(OS

Products specifications
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Mount
    Through Hole
  • Number of Pins
    3
  • Supplier Device Package
    TO-3P(N)
  • Mfr
    Toshiba Semiconductor and Storage
  • Package
    Tube
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    50 A
  • Test Conditions
    -
  • RoHS
    Compliant
  • Maximum Gate Emitter Voltage
    - 25 V, + 25 V
  • Pd - Power Dissipation
    230 W
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 175 C
  • Unit Weight
    0.162260 oz
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    25
  • Mounting Styles
    Through Hole
  • Manufacturer
    Toshiba
  • Brand
    Toshiba
  • Collector- Emitter Voltage VCEO Max
    600 V
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    175°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Max Operating Temperature

    The Maximum Operating Temperature is the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    175 °C
  • Min Operating Temperature
    -55 °C
  • Subcategory
    IGBTs
  • Technology
    Si
  • Configuration
    Single
  • Element Configuration

    The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals.

    Single
  • Power Dissipation

    the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action.

    230
  • Input Type
    Standard
  • Power - Max
    230 W
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    IGBT Transistors
  • Collector Emitter Voltage (VCEO)
    600 V
  • Max Collector Current
    50 A
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 50A
  • Continuous Collector Current
    50
  • IGBT Type
    -
  • Current - Collector Pulsed (Icm)
    100 A
  • Td (on/off) @ 25°C
    -
  • Switching Energy
    -
  • Product Category

    a particular group of related products.

    IGBT Transistors
  • Lead Free
    Lead Free
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