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Toshiba America Electronic Components GT60M103
Part No:
GT60M103
Manufacturer:
Package:
-
AINNX NO:
69103411-GT60M103
Category:
Description:
TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
Products specifications
- Transistor Element MaterialSILICON
- Part Life Cycle CodeObsolete
- Ihs ManufacturerTOSHIBA CORP
- Number of Elements1
- Reach Compliance Codeunknown
- Qualification Status
An indicator of formal certification of qualifications.
Not Qualified - ConfigurationSINGLE
- Polarity/Channel TypeN-CHANNEL
- Collector Current-Max (IC)60 A
- Collector-Emitter Voltage-Max900 V
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