GT50N322A

Toshiba Semiconductor and Storage GT50N322A

Part No:

GT50N322A

Datasheet:

-

Package:

TO-3P-3, SC-65-3

AINNX NO:

28804272-GT50N322A

Description:

PB-F IGBT / TRANSISTOR TO-3PN IC

Products specifications
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Surface Mount

    having leads that are designed to be soldered on the side of a circuit board that the body of the component is mounted on.

    NO
  • Supplier Device Package
    TO-3P(N)
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • Mfr
    Toshiba Semiconductor and Storage
  • Package
    Tube
  • Product Status
    Active
  • Current-Collector (Ic) (Max)
    50 A
  • Test Conditions
    -
  • Maximum Gate Emitter Voltage
    - 25 V, + 25 V
  • Pd - Power Dissipation
    156 W
  • Maximum Operating Temperature

    the maximum body temperature at which the thermistor is designed to operate for extended periods of time with acceptable stability of its electrical characteristics.

    + 150 C
  • Unit Weight
    0.162260 oz
  • Minimum Operating Temperature
    - 55 C
  • Factory Pack QuantityFactory Pack Quantity
    50
  • Mounting Styles
    Through Hole
  • Manufacturer
    Toshiba
  • Brand
    Toshiba
  • Continuous Collector Current Ic Max
    120 A
  • RoHS
    Details
  • Collector- Emitter Voltage VCEO Max
    1 kV
  • Package Description
    FLANGE MOUNT, R-PSFM-T3
  • Package Style
    FLANGE MOUNT
  • Package Body Material
    PLASTIC/EPOXY
  • Turn-on Time-Nom (ton)
    330 ns
  • Turn-off Time-Nom (toff)
    700 ns
  • Operating Temperature-Max
    150 °C
  • Manufacturer Part Number
    GT50N322A
  • Package Shape
    RECTANGULAR
  • Number of Elements
    1
  • Part Life Cycle Code
    Active
  • Ihs Manufacturer
    TOSHIBA CORP
  • Risk Rank
    2.12
  • Series
    -
  • Operating Temperature

    The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail.

    150°C (TJ)
  • Packaging

    Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. The material of the shell can be metal, plastic, glass or ceramic.

    Tube
  • Subcategory
    IGBTs
  • Technology
    Si
  • Terminal Position
    SINGLE
  • Terminal Form

    Occurring at or forming the end of a series, succession, or the like; closing; concluding.

    THROUGH-HOLE
  • Reach Compliance Code
    unknown
  • Pin Count

    a count of all of the component leads (or pins)

    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status

    An indicator of formal certification of qualifications.

    Not Qualified
  • Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    156 W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Product Type

    a group of products which fulfill a similar need for a market segment or market as a whole.

    IGBT Transistors
  • Voltage - Collector Emitter Breakdown (Max)
    1000 V
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 60A
  • Collector Current-Max (IC)
    50 A
  • IGBT Type
    -
  • Collector-Emitter Voltage-Max
    1000 V
  • Current - Collector Pulsed (Icm)
    120 A
  • Td (on/off) @ 25°C
    -
  • Switching Energy
    -
  • Reverse Recovery Time (trr)
    800 ns
  • Product Category

    a particular group of related products.

    IGBT Transistors
0 Similar Products Remaining